Business

Oct 29, 2014

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Two firms that lead the world's memory semiconductor market have recently both shown off new DRAM technologies, applying microcellular and mass storage technologies to semiconductor memory.

Samsung Electronics has succeeded in mass producing the industry’s most advanced 8-gigabyte DDR4 memory chip. In an analogous move, another memory market giant, SK Hynix, has unveiled the world’s highest density non-volatile dual in-line memory module (NVDIMM).

Samsung’s new DDR4 technology shows better performance when transmitting data at speeds of up to 2,400 megabytes per second, 30 percent faster than that of existing DDR3 chips. It uses less power, only 1.2 volts, too, about 20 percent less than the 1.5 volts used by DDR3 chips.

삼성전자가 세계 최초로 선보인 20나노 8기가 서버용 D램
Samsung Electronics mass produces the world’s first 8 gigabyte DDR4 memory chip.

Samsung Electronics mass produces the world’s first 8 gigabyte DDR4 memory chip.


SK Hynix developed its 16-gigabyte NVDIMM chip based on its existing 4-gigabyte DDR4 chip and using its advanced 20-nanometer technology.

This chip can save and restore data safely because it can send DRAM data to a NAND flash drive, which continues to function in the case of an unexpected power loss. Such products did exist in the past, but this is the first time that a large 16-gigabyte NVDIMM chip has been developed, SK Hynix said.

SKHynix_DDR4-NVDIMM-02.jpg
SK Hynix makes the world’s highest density 16 gigabyte NVDIMM chip.

SK Hynix makes the world’s highest density 16 gigabyte NVDIMM chip.


SK Hynix said that, “This NVDIMM chip has the strengths of a fast transmission speed like DRAM and has the stability of flash memory. This will create a new market for big data processing solutions.”

By Yoon Sojung
Korea.net Staff Writer
arete@korea.kr